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Fabrication of a multistrip magnetic/nonmagnetic structure in a thinsandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB)irradiation has been attempted. A control experiment was initially performed byirradiation with a standard 30 keV Ga ion beam at various fluences. Analyseswere carried out by Rutherford backscattering spectrometry, X-ray reflectivity,magnetooptical Kerr effect (MOKE) measurements and MOKE microscopy. Withincreasing ion fluence, the coercivity as well as Kerr rotation decreases. Athreshold ion fluence has been identified, where ferromagnetism of the Ni layeris lost at room temperature and due to Si incorporation into the Ni layer, aNi0.68Si0.32 alloy layer is formed. This fluence was used in FIB irradiation ofparallel 50 nm wide stripes, leaving 1 micrometer wide unirradiated stripes inbetween. MOKE microscopy on this FIB-patterned sample has revealed interactingmagnetic domains across several stripes. Considering shape anisotropy effects,which would favor an alignment of magnetization parallel to the stripe axis,the opposite behavior is observed. Magneto-elastic effects introducing astress-induced anisotropy component oriented perpendicular to the stripe axisare the most plausible explanation for the observed behavior.

Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magnetic-nonmagnetic multistrip patterning by focused ion beam