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Structural and thermoelectric properties of metallic and semiconductingSb2Te3 are reported. X-Ray diffraction and Raman spectroscopy studies revealthat semiconducting sample have higher defect density. Nature and origin ofpossible defects are highlighted. Semiconducting Sb2Te3 hosts larger numbers ofdefects, which act as scattering center and give rise to the increased value ofresistivity, thermopower and power factor. Thermopower data indicates p-typenature of the synthesized samples. It is evidenced that the surface states areoften mixed with the bulk state, giving rise to metallicity in Sb2Te3. Role ofdifferent scattering mechanism on the thermoelectric property of Sb2Te3 isdiscussed.

Defect induced structural and thermoelectric properties of Sb2Te3 alloy