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We report on the fabrication and characterization of a single-crystal diamonddevice for the electrical stimula- tion of light emission from nitrogen-vacancy(NV0) and other defect-related centers. Pairs of sub-superficial graphiticmicro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+micro-beam irra- diation followed by thermal annealing. A photoluminescence(PL) characterization evidenced a low radiation damage concentration in theinter-electrode gap region, which did not significantly affect the PL featuresdomi- nated by NV centers. The operation of the device in electroluminescence(EL) regime was investigated by ap- plying a bias voltage at the graphiticelectrodes, resulting in the injection of a high excitation current above athreshold voltage (~300V), which effectively stimulated an intense EL emissionfrom NV0 centers. In addition, we report on the new observation of twoadditional sharp EL emission lines (at 563 nm and 580 nm) related tointerstitial defects formed during MeV ion beam fabrication.

Electroluminescence from nitrogen-vacancy and interstitial-related  centers in bulk diamond stimulated by ion-beam-fabricated sub-superficial  graphitic micro-electrodes