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The effect of polarization rotation on the performance of metal oxidesemiconductor field-effect transistors was investigated with aLandau-Ginzburg-Devonshire theory based model. In this analytical model,depolarization field, polarization rotations and the electrostatic propertiesof the doped silicon substrate are considered to illustrate the size effect offerroelectric oxides and the stability of polarization in each direction. Basedon this model, we demonstrate that MOSFET operation could be achieved bypolarization reorientation with a low operating voltage, if the thickness offerroelectric oxide is properly selected. Polarization reorientation can boostthe surface potential of the silicon substrate, leading to a subthreshold swingS lower than 60 mV/decade. We believe that this model could provide guidance indesigning electronic logic devices with low operating voltages and low activeenergy consumption.

Low Operation Voltage Ferroelectric Field-Effect Transistor Based on Polarization Rotation Effect