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X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated.After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20%drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub,the major cause of n-MOSFET drain current change is the generated positivecharge in BOX. On the other hand, the major cause of p-MOSFET drain currentchange is the radiation induced gate channel modulation by the generatedpositive charge in sidewall spacer. It is confirmed that the p-MOSFET draincurrent change is improved by higher PLDD dose. Thinner BOX is also proposedfor further radiation hardness improvement.

X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement