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We suggest universal expressions for the rates of charge transition betweenmolecules in organic disordered semiconductors, which differ between electronsand holes. The donor and acceptor molecules (monomers) are represented in termsof their frontier orbitals, with asymptotic tails reflecting the differentasymptotic potential wells which bind different charge carriers. This modelpredicts an asymmetry of the tunnel factors and the interaction with phononfield with respect to electrons and holes, leading to different formulas forthe transition rates and the thermal mobility of the different charge carriers.This is demonstrated explicitly for transitions between organic moleculesinitiated by fluctuations of the inter-molecular distance due to deformation ofby the phonon field, but the asymmetry between the carriers is universal andshould be essential for quantitative analysis of charge transport in anydisordered material. In particular, in the framework of classical Mottconsiderations our result predict an unusual temperature dependence of holesmobility, $\sim (T_0/T)^r \exp -( T_0/T)^{1/4}$, where $r = ( E_F^h)^{-1/2}$,and $E_F^h$ is the energy of hole at the Fermi level in atomic units.

On the qualitative difference between phonon-assisted transition rates of electrons and holes in organic disordered semiconductors