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Reversible straintronic switching of a nanomagnet's magnetization between twostable or metastable states promises ultra-energy-efficient non-volatilememory. Here, we report strain-induced magnetization switching in ~300 nm sizedFeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of onepolarity applied across the substrate generates compressive strain in ananomagnet and switches its magnetization to one state, while voltage of theopposite polarity generates tensile strain and switches the magnetization backto the original state, resulting in "non-toggle" switching. The two states canencode the two binary bits, and, using the right voltage polarity, one canwrite either bit deterministically.

Reversible strain-induced magnetization switching in FeGa nanomagnets:  Pathway to a rewritable, non-volatile, non-toggle, straintronic memory cell  for extremely low energy operation