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X-ray absorption near-edge spectroscopy (XANES), photoluminescence,cathodoluminescence and Raman spectroscopy have been used to investigate thechemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogenexists in multiple states: NO, NZn and loosely bound N2 molecule. The workestablishes a direct link between a donor-acceptor pair (DAP) emission at 3.232eV and the concentration of loosely bound N2. These results confirm that N2 atZn site is a potential candidate for producing a shallow acceptor state inN-doped ZnO as theoretically predicted by Lambrecht and Boonchun [Phys. Rev. B87, 195207 (2013)]. Additionally, shallow acceptor states arising from NOcomplexes have been ruled out in this study.

Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing