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Since the discovery of n-type copper oxide superconductors, the evolution ofelectron- and hole-bands and its relation to the superconductivity have beenseen as a key factor in unveiling the mechanism of high-Tc superconductors. Sofar, the occurrence of electrons and holes in n-type copper oxides has beenachieved by chemical doping, pressure, and/or deoxygenation. However, theobserved electronic properties are blurred by the concomitant effects such aschange of lattice structure, disorder, etc. Here, we report on successfultuning the electronic band structure of n-type Pr2-xCexCuO4 (x = 0.15)ultrathin films, via the electric double layer transistor technique. Abnormaltransport properties, such as multiple sign reversals of Hall resistivity innormal and mixed states, have been revealed within an electrostatic field inrange of -2 V to +2 V, as well as varying the temperature and magnetic field.In the mixed state, the intrinsic anomalous Hall conductivity invokes thecontribution of both electron and hole-bands as well as the energy dependentdensity of states near the Fermi level. The two-band model can also describethe normal state transport properties well, whereas the carrier concentrationsof electrons and holes are always enhanced or depressed simultaneously inelectric fields. This is in contrast to the scenario of Fermi surfacereconstruction by antiferromagnetism, where an anti-correlation betweenelectrons and holes is commonly expected. Our findings paint the picture whereCoulomb repulsion plays an important role in the evolution of the electronicstates in n-type cuprate superconductors.

Evolution of electronic states in n-type copper oxide superconductor via electric double layer gating