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We have investigated low-frequency 1/f noise in the boron nitride - grapheme- boron nitride heterostructure field - effect transistors on Si/SiO2substrates (f is a frequency). The device channel was implemented with a singlelayer graphene encased between two layers of hexagonal boron nitride. Thetransistors had the charge carrier mobility in the range from 30000 to 36000cm2/Vs at room temperature. It was established that the noise spectral densitynormalized to the channel area in such devices can be suppressed to 5 x 10^-9{\mu}m2 Hz^-1, which is a factor of x5 - x10 lower than that innon-encapsulated graphene devices on Si/SiO2. The physical mechanism of noisesuppression was attributed to screening of the charge carriers in the channelfrom traps in SiO2 gate dielectric and surface defects. The obtained resultsare important for the electronic and optoelectronic applications of graphene.

Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors