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Bottom up nanowires are attractive for realizing semiconductor devices withextreme heterostructures because strain relaxation through the nanowiresidewalls allows the combination of highly lattice mismatched materials withoutcreating dislocations. The resulting nanowires are used to fabricate lightemitting diodes (LEDs), lasers, solar cells and sensors. However, expensivesingle crystalline substrates are commonly used as substrates for nanowireheterostructures as well as for epitaxial devices, which limits themanufacturability of nanowire devices. Here, we demonstrate nanowire LEDsdirectly grown and electrically integrated on metal. Optical and structuralmeasurements reveal high-quality, vertically-aligned GaN nanowires onmolybdenum and titanium films. Transmission electron microscopy confirms thecomposition variation in the polarization-graded AlGaN nanowire LEDs. Blue togreen electroluminescence is observed from InGaN quantum well active regions,while GaN active regions exhibit ultraviolet emission. These resultsdemonstrate a pathway for large-scale fabrication of solid state lighting andoptoelectronics on metal foils or sheets.

Semiconductor Nanowire Light Emitting Diodes Grown on Metal: A Direction towards Large Scale Fabrication of Nanowire Devices