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We use the tight-binding model and the random-phase approximation toinvestigate the intrinsic plasmon in silicene. At finite temperatures, anundamped plasmon is generated from the interplay between the intraband and theinterband-gap transitions. The extent of the plasmon existence range in termsof momentum and temperature, which is dependent on the size ofsingle-particle-excitation gap, is further tuned by applying a perpendicularelectric field. The plasmon becomes damped in the interband-excitation region.A low damped zone is created by the field-induced spin split. Thefield-dependent plasmon spectrum shows a strong tunability in plasmon intensityand spectral bandwidth. This could make silicene a very suitable candidate forplasmonic applications.

The effect of perpendicular electric field on Temperature-induced plasmon excitations for intrinsic silicene