English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

The surface states of a 3D topological insulator (TI) exhibit topologicalprotection against backscattering. However, the contribution of bulk electronsto the transport data is an impediment to the topological protection ofsurface. We report the tuning of the chemical potential in the bulk of Bi2Se2TeTI thin films, pinning it near the center of the bulk band gap, therebysuppressing the bulk carriers. The temperature dependent resistance of thesefilms shows activated behavior down to 50K, followed by a metallic transitionat lower temperatures, a hallmark of the robustness of TI surface states.Manifestation of topological protection and surface dominated transport isexplained by 2D weak antilocalization phenomenon. We further explore the effectof surface to bulk coupling in TI in this work, which is captured by the numberof effective conducting surface channels that participate in the transport. Thepresence of a single conducting channel indicates a strong surface to bulkcoupling which is detrimental to purely topological transport. We demonstratethe decoupling of topological surface states on opposite surfaces of thinfilms, thereby suppressing the bulk transport. Our findings provide a deeperunderstanding of surface to bulk coupling along with topological transportbehavior and their respective tunability.

Topological delocalization and tuning of surface channel separation in Bi2Se2Te Topological Insulator Thin films