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We show that the $d^{0}$ ferromagnetism with high Curie temperature ($T_c$)can be achieved in the electron doped hydrogenated epitaxial graphene on somecertain SiC substrates through first-principles calculations. The pristinesystems are found to be a Mott insulator independent of SiC polytypes (2$H$,4$H$ or 6$H$) which, however, play a significant role in the modulation ofmagnetic interaction. Carrier doping enhances the ferromagnetic coupling due tothe double exchange mechanism and thus realizes the phase transition fromantiferromagnetism to ferromagnetism. A $T_c$ of around 400 K is predicted onthe 2$H$-SiC. We employ a non-degenerate Hubbard model to demonstrate how theSiC affects the interfacial magnetism in intra-atomic Coulomb repulsion andintersite hopping interactions.

High-$T_c$ $d^{0}$ ferromagnetism in a doped Mott insulator: the case of hydrogenated epitaxial graphene on SiC(0001)