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Magnetoresistance and rectification are two fundamental physical propertiesof heterojunctions and respectively have wide applications in spintronicsdevices. Being different from the well known various magnetoresistance effects,here we report a brand new large magnetoresistance that can be regarded asrectification magnetoresistance: the application of a pure small sinusoidalalternating-current to the nonmagnetic Al/Ge Schottky heterojunctions cangenerate a significant direct-current voltage, and this rectification voltagestrongly varies with the external magnetic field. We find that therectification magnetoresistance in Al/Ge Schottky heterojunctions is as largeas 250% at room temperature, which is greatly enhanced as compared with theconventional magnetoresistance of 70%. The findings of rectificationmagnetoresistance open the way to the new nonmagnetic Ge-based spintronicsdevices of large rectification magnetoresistance at ambient temperature underthe alternating-current due to the simultaneous implementation of therectification and magnetoresistance in the same devices.

Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions