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We report semiconducting behavior of monolayer graphene enabled throughplasma activation of substrate surfaces. The graphene devices are fabricated bymechanical exfoliation onto pre-processed SiO2/Si substrates. Contrary topristine graphene, these graphene samples exhibit a transport gap as well asnonlinear transfer characteristics, a large on/off ratio of 600 at cryogenictemperatures, and an insulating-like temperature dependence. Ramanspectroscopic characterization shows evidence of sp3 hybridization of C atomsin the samples of graphene on activated SiO2/Si substrates. We analyze thehopping transport at low temperatures, and weak localization observed frommagnetotransport measurements, suggesting a correlation between carrierlocalization and the sp3-type defects in the functionalized graphene. Thepresent study demonstrates the functionalization of graphene using a novelsubstrate surface-activation method for future graphene-based applications.

Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces