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Here, we report the photoconducting response of field-effect transistorsbased on three atomic layers of chemical vapor transport grown WSe$_2$ crystalsmechanically exfoliated onto SiO$_2$. We find that tri-layered WSe$_2$field-effect transistors, built with the simplest possible architecture, candisplay high hole mobilities ranging from 350 cm$^2$/Vs at room temperature(saturating at a value of ~500 cm$^2$/Vs below 50 K) displaying a strongphotocurrent response which leads to exceptionally high photo responsivities upto 7 A/W under white light illumination of the entire channel for powerdensities p < 10$^2$ W/m$^2$. Under a fixed wavelength of $\lambda$ = 532 nmand a laser spot size smaller than the conducting channel area we extract photoresponsitivities approaching 100 mA/W with concomitantly high external quantumefficiencies up to ~ 40 % at room temperature. These values surpass valuesrecently reported from more complex architectures, such as graphene andtransition metal dichalcogenides based heterostructures. Also, tri-layeredWSe$_2$ photo-transistors display photo response times in the order of 10microseconds. Our results indicate that the addition of a few atomic layersconsiderably decreases the photo response times, probably by minimizing theinteraction with the substrates, while maintaining a very highphoto-responsivity.

High Photoresponsivity and Short Photo Response Times in Few-Layered WSe$_2$ Transistors