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We study theoretically the effects of anisotropy on the thermoelectricperformance of $p$-type AgBiSe$_2$. We present an apparent realization of thethermoelectric benefits of one-dimensional "plate-like" carrier pocketanisotropy in the valence band of this material. Based on first principlescalculations we find a substantial anisotropy in the electronic structure,likely favorable for thermoelectric performance, in the valence bands of thehexagonal phase of the silver chalcogenide thermoelectric AgBiSe$_2$, while theconduction bands are more isotropic, and in our experiments do not attain highperformance. AgBiSe$_2$ has already exhibited a $ZT$ value of 1.5 in ahigh-temperature disordered fcc phase, but room-temperature performance has notbeen demonstrated. We develop a theory for the ability of anisotropy todecouple the density-of-states and conductivity effective masses, pointing outthe influence of this effect in the high performance thermoelectricsBi$_2$Te$_3$ and PbTe. From our first principles and Boltzmann transportcalculations we estimate the performance of $p$-type AgBiSe$_{2}$.

Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of $p$-type AgBiSe$_2$