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We record fine oscillations of 20 to 60 mT superimposed on largeroscillations having periodicity ~ 2 T at temperatures up to 100 K and fields upto 10 T from silicon nanowires. Having confirmed that these features appearfrom the edge states associated with skipping orbits at nanowire edges andconfined pure orbits in the interior of the nanowires we derive electroneffective mass of 0.001 me to 0.006 me, carrier lifetime in the range 3 to 19fs and carrier density that varies from 2x10^11 cm^-2 to 9x10^12 cm^-2.However, at low temperature the observed oscillation amplitude invariant of thefield is attributed to not only a strong size confinement and the pinning oforbits by impurities but also Aharanov Bohm (AB) oscillations due toedge-states that propagate quasi-ballistically through the nanowire. Theoverall oscillation on a linear positive magnetoresistance background can beattributed to temperature-dependent crossover of Shubnikov de Haas oscillations(SdHO) and AB oscillations in silicon nanowires.

Observation of Shubnikov de Haas and Aharanov-Bohm oscillations in silicon nanowires