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In this study we report a method for the preparation of freestandingmagnetocaloric thin films. Non-stoichiometric Heusler alloys Ni-Mn-Sn,Ni-Co-Mn-Sn and Ni-Co-Mn-Al are prepared via sputter deposition. A sacrificialvanadium layer is added between the substrate and the Heusler film. By means ofselective wet-chemical etching the vanadium layer can be removed. Conditionsfor the crystallization of Vanadium layers and epitaxial growth of the Heuslerfilms are indicated. Magnetic and structural properties of freestanding andas-prepared films are compared in detail. The main focus of this study is onthe influence of substrate constraints on the Martensitic transistion.

Vanadium sacrificial layers as a novel approach for the fabrication of freestanding Heusler Shape Memory Alloys