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We demonstrate a novel method for nanowire formation by natural selectionduring wet chemical etching in boiling Phosphoric acid. It is observed thatwire lateral dimensions of sub-10 nm and lengths of 700 nm or more have beennaturally formed during the wet etching. The dimension variation is controlledthrough etching times wherein the underlying cause is the merging of the nearbycrystallographic hexagonal etch pits. The emission processes involving excitonsare found to be efficient and lead to enhanced emission characteristics. Theexciton binding energy is augmented by using quantum confinement wherebyenforcing greater overlap of the electron-hole wave-function. The survivingnanowires are nearly defect-free, have large exciton binding energies of around45 meV and a small temperature variation of the output electroluminescentlight. We have observed superluminescent behaviour of the LEDs formed on thesenanowires. There is no observable efficiency roll off till current densities of400 A/cm2. The present work thus provides an innovative and cost effectivemanner of device fabrication on the formed nanowires and proves the immediateperformance enhancement achievable.

Large excitonic binding energy in GaN based superluminescent light emitting diode on naturally survived sub-10 nm lateral nanowires