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We present optical spectroscopy (photoluminescence and reflectance) studiesof thin layers of the transition metal dichalcogenide WSe2, with thicknessranging from mono- to tetra-layer and in the bulk limit. The investigatedspectra show the evolution of excitonic resonances as a function of layerthickness, due to changes in the band structure and, importantly, due tomodifications of the strength of Coulomb interaction as well. The observedtemperature-activated energy shift and broadening of the fundamental directexciton are well accounted for by standard formalisms used for conventionalsemiconductors. A large increase of the photoluminescence yield withtemperature is observed in WSe2 monolayer, indicating the existence ofcompeting radiative channels. The observation of absorption-type resonances dueto both neutral and charged excitons in WSe2 monolayer is reported and theeffect of the transfer of oscillator strength from charged to neutral excitonupon increase of temperature is demonstrated.

Excitonic resonances in thin films of WSe2: From monolayer to bulk material