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The recent development in the fabrication of artificial oxideheterostructures opens new avenues in the field of quantum materials byenabling the manipulation of the charge, spin and orbital degrees of freedom.In this context, the discovery of two-dimensional electron gases (2-DEGs) atLAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashbaspin-orbit coupling (SOC), represents a major breakthrough. Here, we report onthe realisation of a field-effect LaAlO3/SrTiO3 device, whose physicalproperties, including superconductivity and SOC, can be tuned over a wide rangeby a top-gate voltage. We derive a phase diagram, which emphasises afield-effect-induced superconductor-to-insulator quantum phase transition.Magneto-transport measurements indicate that the Rashba coupling constantincreases linearly with electrostatic doping. Our results pave the way for therealisation of mesoscopic devices, where these two properties can bemanipulated on a local scale by means of top-gates.

Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices