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A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 wassuccessfully synthesized using a two-step solvothermal method. The twocrystalline components were separated well by a sharp lattice-matched interfacewhen the optimized procedure was used. Inspecting the heterojunction usinghigh-resolution transmission electron microscopy showed that epitaxial growthoccurred along the horizontal plane. A rectification curve was observed at lowtemperatures. Quantum correction from the weak antilocalization reveals thetransport of the topological surface state. There was, therefore, astaggered-gap lateral heterojunction with a small junction voltage, which isappealing for a platform for spin filters and one-dimensional topologicalinterface states.

Lateral Heterojunction Sb2Te3/Bi2Te3 and its topological transport