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We have elaborately studied the electronic structure of 555-777 divacancy(DV) defected armchair edged graphene nanoribbon (AGNR) and transportproperties of AGNR based two-terminal device constructed with one defectedelectrode and one N doped electrode, by using density functional theory andnon-equilibrium Green's function based approach. The introduction of 555-777 DVdefect into AGNRs, results in a shifting of the {\pi} and {\pi}* bands towardsthe higher energy value which indicates a shifting of the Fermi level towardsthe lower energy. Formation of a potential barrier, very similar to that ofconventional p-n junction, has been observed across the junction of defectedand N doped AGNR. The prominent asymmetric feature of the current in thepositive and negative bias indicates the diode like property of the device withhigh rectifying efficiency within wide range of bias voltages. The device alsoshows robust negative differential resistance (NDR) with very highpeak-to-valley ratio. The analysis of the shifting of the energy states of theelectrodes and the modification of the transmission function with applied biasprovides an insight into the nonlinearity and asymmetry observed in the I-Vcharacteristics. Variation of the transport properties on the width of theribbon has also been discussed.

First principles design of divacancy defected graphene nanoribbon based rectifying and negative differential resistance device