English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

An implicit Euler finite-volume scheme for a spinorial matrix drift-diffusionmodel for semiconductors is analyzed. The model consists of strongly coupledparabolic equations for the electron density matrix or, alternatively, ofweakly coupled equations for the charge and spin-vector densities, coupled tothe Poisson equation for the elec-tric potential. The equations are solved in abounded domain with mixed Dirichlet-Neumann boundary conditions. The charge andspin-vector fluxes are approximated by a Scharfetter-Gummel discretization. Themain features of the numerical scheme are the preservation of positivity and L$\infty$ bounds and the dissipation of the discrete free energy. The existenceof a bounded discrete solution and the monotonicity of the discrete free energyare proved. For undoped semiconductor materials, the numerical scheme isuncon-ditionally stable. The fundamental ideas are reformulations using spin-upand spin-down densities and certain projections of the spin-vector density,free energy estimates, and a discrete Moser iteration. Furthermore, numericalsimulations of a simple ferromagnetic-layer field-effect transistor in twospace dimensions are presented.

A Finite-Volume Scheme for a Spinorial Matrix Drift-Diffusion Model for Semiconductors