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Mn-doped GaAs thin films were grown at a high substrate temperature of 580 C.During the growth process, the Mn cell temperature was ramped at differentrates, resulting in a variety of different Mn concentration depth profileslopes, as measured using dynamic secondary ion mass spectrometry (SIMS).Results show that controlling the Mn deposition rate via temperature duringmolecular beam epitaxy (MBE) growth can mitigate the effect of Mn atomsdiffusing toward the surface. Most importantly, the slope of the Mnconcentration as a function of depth inside the sample can be tuned fromnegative to positive.

Controlling Mn Depth Profiles in GaMnAs During High-Temperature Molecular Beam Epitaxial Growth