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The in-plane electron mobility has been calculated in InAs/GaSb type-IIsuperlattices at low temperatures. The interface roughness scattering andionized impurity scattering are investigated as the dominant scatteringmechanisms in limiting the electron transport at low temperatures. For thispurpose, the band structures and wave functions of electrons in suchsuperlattices are calculated by solving the K.P Hamiltonian using the numericalFinite Difference method. The scattering rates have obtained for differenttemperatures and structural parameters. We show that the scattering rates arehigh in thin-layer superlattices and the mobility rises as the temperatureincreases in low-temperature regime.

Role of Ionized Impurity and Interface Roughness Scatterings in the Electronic Transport of InAs/GaSb Type II Superlattices at Low Temperatures