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Quantum spin Hall (QSH) state of matter has a charge excitation bulk bandgapand a pair of gapless spin-filtered edge-states, which can supportbackscattering-free transport. Bilayer phosphorene possesses a large tunablebandgap and high carrier mobilities, and therefore has the widely potentialapplications in nanoelectronics and optics. Here, we demonstrate anstrain-induced electronic topological phase transition from a normal to QSHstate in bilayer phosphorene accompanying by a band inversion that changes$\mathbbm{Z}_{2}$ from 0 to 1, which is highly dependent on the interlayerstacking. When the bottom layer is shifted by 1/2 unit cell along axialdirection with respect to the top layer, the topological bandgap reaches up to92.5 meV, which is sufficiently large to realize the QSH effect at roomtemperature. Its optical absorption spectrum becomes broadened, and evenextends to the far-infra-red region leading to a wider range of brightness,which is highly desirable in optic devices.

Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene