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Using first-principles calculations, we systematically investigate theelectronic structures and band topologies of four kinds of group-V elemental(P, As, Sb and Bi) monolayers with buckled honeycomb structure. It is foundthat all these monolayers can change from semiconducting to semimetallic undercompressive strain. If a tensile strain is however applied, the P, As and Sbmonolayers undergo phase transition from topologically trivial to non-trivialregime, whereas the topological insulating nature of Bi monolayer remainsunchanged. With tunability of the band gaps and band topologies, it can beexpected that these elemental monolayers could be promising candidates forfuture optoelectronic and spintronic applications.

Effects of biaxial strain on the electronic structures and band topologies of group-V elemental monolayers