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In this paper, we present a study of the effects of temperature on theelectron mobility in InAs/GaSb type-II superlattices (SLs) in which the bandstructures and wave functions are calculated by solving the K.P Hamiltonianusing the numerical Finite Difference method. In the model the dominantscattering mechanisms such as alloy scattering, acoustic phonon scattering andoptical phonon scattering are taken into account. The obtained electronmobility of the type II SLs is depended on the structural parameters anddifferent scattering parameters. A comparison of our calculated results withpublished experimental data is shown to be in good agreement.

Study of the Electron Mobility in InAs/GaSb Type II Superlattices at High Temperatures