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Orthorhombic arsenene was recently predicted as an indirect bandgapsemiconductor. Here, we demonstrate that nanostructuring arsenene intonanoribbons can successfully transform the bandgap to be direct. It is foundthat direct bandgaps hold for narrow armchair but wide zigzag nanoribbons,which is dominated by the competition between the in-plane and out-of-planebondings. Moreover, straining the nanoribbons also induces a direct bandgap andsimultaneously modulates effectively the transport property. The gap energy islargely enhanced by applying tensile strains to the armchair structures. In thezigzag ones, a tensile strain makes the effective mass of holes much higherwhile a compressive strain cause it much lower than that of electrons. Ourresults are crutial to understand and engineer the electronic properties of twodimensional materials beyond the planar ones like graphene.

Orientation and strain modulated electronic structures in puckered arsenene nanoribbons