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How to transfer MoS2 films from growth substrates onto target substrates is acritical issue for its practical applications. However, it remains a greatchallenge to avoid the sample degradation and substrate destruction, sincecurrent transfer method inevitably employs a wet chemical etching process.Herein, we develop an etching-free transfer method for transferring wafer-scaleMoS2 films onto arbitrary substrates by using ultrasonication. Briefly, thecollapse of ultrasonication-generated microbubbles at the interface betweenpolymer-coated MoS2 film and substrates induce sufficient force to delaminatethe MoS2 films. Using this method the MoS2 films can be transferred from allthe substrates (silica, mica, strontium titanate, sapphire) and remains theoriginal sample morphology and quality. This method guarantees a simpletransfer process, allows the reuse of growth substrates, without the presenceof any hazardous etchants. The etching-free transfer method may promote thebroad applications of MoS2 in electronics, optoelectronics and catalysis.

Etching-free transfer of wafer-scale MoS2 films