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In the paper the version of the field effect tunnel nano transistor onquantum well is researched, where the control voltage is applied to thebarriers surrounding the quantum well, and electron drain comes from thequantum well. Electrons tunnel into the quantum well through the first half ofthe two-humped tunnel barrier (double heterojunction) formed by the sandwich ofthree layers of wide band 2D semiconductors (graphene derivatives: perhydrooxygrafen (COH)n, fluoro graphen (CF)n, grafan (CH)n) essentially differing inlocations of the bottom level of the conduction band. The middle layer - fluorographen (CF)n has the lowest bottom of the conduction band, which forms thequantum well with depth of ~ 3 eV and a width of ~ 0.6 nm in the total tunnelpotential barrier of 1.8 nm width, and serves as a channel for the flow ofelectrons. Metal electrode of source and metal electrode of gate adjacent tothe outer layers of 2D semiconductor sandwich - perhydrooxy grafen (COH)n andgrafan (CH)n, respectively, form the common "gate" of sandwich with size 22*22nm^2. A metal drain electrode with a width of 10 nm and with the potential on 1V higher than that of the first electrode (source) are in contact with themiddle layer of fluoro graphen (CF)n, beyond of the sandwich having for thispurpose the width of 35 nm greater than that of the outer semiconductor layers2D internal three-layer sandwich. The potential of the gate opening is 0.62 V.The maximum operating current Isd is ~ 2*10^(-5) A. Current flowing in a closedstate theoretically is equal to zero, and the parasitic current flowing throughthe gate electrode in the open state Ig = Ileak is ~ 10^(-10) A. Quantumcapacitance of the transistor would allow the device to operate at a frequencyof up to 10^12 Hz.

Tunnel field effect transistor on a quantum well formed by three layers  of graphene derivatives (COH)n-(CF)n-(CH)n, with the drain from the middle  layer - (CF)n