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In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at. % Alconcentration were prepared by sol-gel method on glass substrates. Thedeposited films were annealed at different temperatures of 300, 350, 400, 450and 500 {\deg}C for 1 h in air. X-ray diffraction (XRD) showed wurtzitecrystalline structure for the films annealed above 400 {\deg}C. The films weresubsequently irradiated by beams of excimer (KrF, {\lambda}=248 nm) laser. Theevolution of crystal structure, surface morphology and optical properties werestudied using XRD, filed emission scanning electron microscope (FE-SEM) andUV-Vis spectrophotometer, respectively. Real-time measurement of electricalconductivity during laser irradiation showed a transient or persistentphotoconductivity effect. The effect of laser energy on this photoconductivitywas also investigated. Based on the observed photoluminescence (PL) and X-rayphotoelectron spectroscopy (XPS), the observed photoconductivity effect wasdescribed.

Real-time measurement of laser induced photoconductivity in sol-gel derived Al doped ZnO thin films