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The effect of irradiation by 30-keV Ga+ and 35-keV He+ ions (in relativelysmall doses) on the excitonic reflectivity spectra of single InGaAs/GaAsquantum-well structures is studied. It is found that the irradiation results indecreasing intensity and broadening of the excitonic resonances in thereflectivity spectra for all the doses. It is shown that these changes are notrelated to a decrease of the exciton transition oscillator strength and,therefore, to the irradiation-induced destruction of the excitonic states, butcan be rather ascribed to a common cause, namely, to inhomogeneous broadeningof the excitonic resonances proportional to the exposure dose.A tentative modelof the irradiation-induced broadening is considered, with the mechanism of theprocess being a consequence of scat-tering of the 2D excitons by structuraldefects associated with Ga(In) and As vacancies arising upon collisions of thehigh-energy ions with regular atoms of the crystal structure. The model is usedto compare experimental dependence of efficiency of the Ga+-ion-inducedbroad-ening on distance of the quantum well from the irradiated surface with asimilar dependence calculated using the Monte-Carlo technique. A discrepancybetween the results of simulation and experimental data is discussed.

Effect of irradiation by He+ and Ga+ ions on 2D-exciton susceptibility of the InGaAs/GaAs quantum-well structures