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Two-dimensional numerical simulation of switching processes for equivalentsilicon insulated gate bipolar transistors of CSTBT-type and hybrid SITh-MOSthyristors (HSMT) has been performed. It is shown that the energy of switchinglosses during turning on and off periods in HSMT is greater than in totalyequivalent CSTBT. Therefore, the time-averaged power Pav dissipated in HSMT issmaller than in equivalent CSTBT only for rather long total current pulseduration. However, lowering the lifetime of nonequilibrium charge carriers tnpin the SITh can significantly reduce switching losses of the whole HSMT, whilemaintaining its advantage for the static on state. Therefore, for each set ofCSTBT parameters it seams to be possible to select up such tnp in "almostequivalent" HSMT that the averaged power dissipation in HSMT will be less, thanin equivalent CSTBT, for any set ranges of current pulse amplitude andduration.

Comparison of the time-averaged power losses in the insulated-gate bipolar transistors and the hybrid SIT-MOS thyristors