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Atomically thin two-dimensional (2D) semiconductors such as molybdenumdisulphide (MoS2) hold great promise in electrical, optical, and mechanicaldevices and display novel physical phenomena such as coupled spin-valleyphysics and the valley Hall effect. However, the electron mobility of mono- andfew-layer MoS2 has so far been substantially below theoretically predictedlimits, particularly at low temperature (T), which has hampered efforts toobserve its intrinsic quantum transport behaviors. Potential sources ofdisorder and scattering include both defects such as sulfur vacancies in theMoS2 itself, and extrinsic sources such as charged impurities and remoteoptical phonons from oxide dielectrics. To reduce extrinsic scattering andapproach the intrinsic limit, we developed a van der Waals (vdW)heterostructure device platform where MoS2 layers are fully encapsulated withinhexagonal boron nitride (hBN), and electrically contacted in a multi-terminalgeometry using gate-tunable graphene electrodes. Multi-terminalmagneto-transport measurements show dramatic improvements in performance,including a record-high Hall mobility reaching 34,000 cm2/Vs for 6-layer MoS2at low T. Comparison to theory shows a decrease of 1-2 orders of magnitude inthe density of charged impurities, indicating that performance at low T inprevious studies was limited by extrinsic factors rather than defects in theMoS2. We also observed Shubnikov-de Haas (SdH) oscillations for the first timein high-mobility monolayer and few-layer MoS2. This novel device platformtherefore opens up a new way toward measurements of intrinsic properties andthe study of quantum transport phenomena in 2D semiconducting materials.

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform