English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

A fundamental understanding of the intrinsic optoelectronic properties ofatomically thin transition metal dichalcogenides (TMDs) is crucial for itsintegration into high performance semiconductor devices. Here, we investigatethe transport properties of chemical vapor deposition (CVD) grown monolayermolybdenum disulfide (MoS2) under photo-excitation using correlated scanningphotocurrent microscopy and photoluminescence imaging. We examined the effectof local phase transformation underneath the metal electrodes on the generationof photocurrent across the channel length with diffraction-limited spatialresolution. While maximum photocurrent generation occurs at the Schottkycontacts of semiconducting (2H-phase) MoS2, after the metallic phasetransformation (1T-phase), the photocurrent peak is observed towards the centerof the device channel, suggesting a strong reduction of native Schottkybarriers. Analysis using the bias and position dependence of the photocurrentindicates that the Schottky barrier heights are few meV for 1T- and ~200 meVfor 2H-contacted devices. We also demonstrate that a reduction of nativeSchottky barriers in a 1T device enhances the photo responsivity by more thanone order of magnitude, a crucial parameter in achieving high performanceoptoelectronic devices. The obtained results pave a pathway for the fundamentalunderstanding of intrinsic optoelectronic properties of atomically thin TMDswhere Ohmic contacts are necessary for achieving high efficiency devices withlow power consumption.

Spatially Resolved Photo-Excited Charge Carrier Dynamics in Phase-Engineered Monolayer MoS2