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In this article, we present a configurable field-effect transistor (FET),where not only polarity (n- and p-type), but the conduction mechanism of a FETcan also be configured dynamically. As a result, we can have both types ofdevices, high-performance MOSFET and low-power TFET, for computational andpower efficient system on chip (SoC) products. The calibrated 3D-TCADsimulation results validate characteristics and functionalities of theconfigurable FET, and showed good consistency with the static conventionalMOSFET (or TFET).

A Dynamically Configurable Silicon Nanowire Field Effect Transistor based on Electrically Doped Source/Drain