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We address the photoluminescence emission of individual germanium extrinsiccenters in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through athorough analysis of micro-photoluminescence experiments we demonstrate thecapability of high temperature emission (70 K) and multiexcitonic features(neutral exciton X, biexciton XX, positive X+ and negative X- charged exciton)of these quantum emitters. Finally, we investigate the renormalization of eachenergy level showing a large and systematic change of the binding energy of XXand X+ from positive to negative values (from ~+5 meV up to ~-7 meV coveringabout ~ 70 meV of the emission energy) with increasing quantum confinement.These light emitters exhibiting energy-degenerate X and XX energy levels at~1.855 eV (680 nm) are a promising resource for the generation of entangledphotons in the time-reordering scheme on a silicon platform.

Germanium-based quantum emitters for time-reordering entanglement scheme with degenerate exciton and biexciton states