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Electrostatic doping in materials can lead to various exciting electronicproperties, such as metal-insulator transition and superconductivity, byaltering the Fermi level position or introducing exotic phases. Cd3As2, athree-dimensional (3D) analog of graphene with extraordinary carrier mobility,was predicted to be a 3D Dirac semimetal, a feature confirmed by recentexperiments. However, most research so far has been focused on metallic bulkmaterials that are known to possess ultra-high mobility and giantmagnetoresistance but limited carrier transport tunability. Here, we report onthe first observation of a gate-induced transition from band conduction tohopping conduction in single-crystalline Cd3As2 thin films via electrostaticdoping by solid electrolyte gating. The extreme charge doping enables theunexpected observation of p-type conductivity in a 50 nm-thick Cd3As2 thin filmgrown by molecular beam epitaxy. More importantly, the gate-tunableShubnikov-de Haas (SdH) oscillations and the temperature-dependent resistancereveal a unique band structure and bandgap opening when the dimensionality ofCd3As2 is reduced. This is also confirmed by our first-principles calculations.The present results offer new insights towards nanoelectronic andoptoelectronic applications of Dirac semimetals in general, and provide newroutes in the search for the intriguing quantum spin Hall effect inlow-dimension Dirac semimetals, an effect that is theoretically predicted butnot yet experimentally realized.

Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films