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Quantum Hall effect (QHE) devices based on epitaxial graphene films grown onSiC were fabricated and studied for development of the QHE resistance standard.The graphene-metal contacting area in the Hall devices has been improved andfabricated using a double metalization process. The tested devices had aninitial carrier concentration of (0.6 - 10)*10^11 1/cm^2 and showedhalf-integer quantum Hall effect at a relatively low (3 T) magnetic field.Application of the photochemical gating method and annealing of the sampleprovides a convenient way for tuning the carrier density to the optimum value.Precision measurements of the quantum Hall resistance (QHR) in graphene andGaAs devices at moderate magnetic field strengths (<7 T) showed a relativeagreement within 6*10^-9.

Fabrication and Study of Large Area QHE Devices Based on Epitaxial Graphene