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A physics-based compact model for silicon gate-all-around (GAA) nanowiretunneling FETs (NW-tFETs) with good accuracy has been developed by consideringPhonon-Assisted Tunneling (PAT) and transition from Quantum Capacitance Limit(QCL) to Classical Limit (CL) during the device-size scaling. The impact of PATresults in the broadening of a single electron-energy level to an energy bandwith density-of-states (DOS) distribution of Lorentzian shape. As aconsequence, the tunneling probability at the edge of tunneling window nolonger changes abruptly from zero to having a finite value. By adjusting theparameters in the Lorentzian function, an accurate fitting to the measuredtransfer characteristics in the subthreshold region is made possible. Besides,with an analytical formula to calculate the channel potential, the model isable to cover naturally the transition from QCL to CL regime when the devicesize is scaled. Furthermore, on-voltage is defined to facilitate the modelingand fitting processes. Comparisons with the experimental data demonstrate themodel accuracy across all device operation regions and the flexibility in modelparameter extraction is also shown.

Compact Model of Nanowire Tunneling FETs Including Phonon-Assisted Tunneling and Quantum Capacitance