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Defects play a key role in determining the properties of most materials and,because they tend to be highly localized, characterizing them at thesingle-defect level is particularly important. Scanning tunneling microscopy(STM) has a history of imaging the electronic structure of individual pointdefects in conductors, semiconductors, and ultrathin films, but single-defectelectronic characterization at the nanometer-scale remains an elusive goal forintrinsic bulk insulators. Here we report the characterization and manipulationof individual native defects in an intrinsic bulk hexagonal boron nitride (BN)insulator via STM. Normally, this would be impossible due to the lack of aconducting drain path for electrical current. We overcome this problem byemploying a graphene/BN heterostructure, which exploits graphene's atomicallythin nature to allow visualization of defect phenomena in the underlying bulkBN. We observe three different defect structures that we attribute to defectswithin the bulk insulating boron nitride. Using scanning tunneling spectroscopy(STS), we obtain charge and energy-level information for these BN defectstructures. In addition to characterizing such defects, we find that it is alsopossible to manipulate them through voltage pulses applied to our STM tip.

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy