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The structural analysis of GaN and Al$_x$Ga$_{1-x}$N/GaN heterostructuresgrown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mnaffects the growth process, and in particular the incorporation of Al, themorphology of the surface, and the plastic relaxation of Al$_x$Ga$_{1-x}$N onGaN. Moreover, the doping with Mn promotes the formation of layeredAl$_x$Ga$_{1-x}$N/GaN superlattice-like heterostructures opening wideperspective for controlling the segregation of ternary alloys during thecrystal growth and for fostering the self-assembling of functional layeredstructures.

Mn as surfactant for the self-assembling of Al$_x$Ga$_{1-x}$N/GaN layered heterostructures