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While impurity has been known widely to affect phase transitions, theatomistic mechanisms have rarely been disclosed. We directly show in atomicscale how impurity atoms induces the condensation of a representativeelectronic phase, charge density wave (CDW), with scanning tunnelingmicroscopy. Oxygen impurity atoms on the self-assembled metallic atomic wirearray on a silicon crystal condense CDW locally even above the transitiontemperature, More interestingly, the CDW along the wires is induced not by asingle atomic impurity but by the cooperation of multiple impurities. Firstprinciples calculations disclose the mechanism of the cooperation as thecoherent superposition of the local lattice strain induced by impurities,stressing the coupled electronic and lattice degrees of freedom for CDW. Thisnewly discovered mechanism can widely be applied to various importantelectronic orders coupled to lattice, opening the possibility of the atomicscale strain engineering.

Impurity-mediated early condensation of an atomic layer electronic crystal