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We measure fast carrier decay rates (6 ps) in GaAs photonic crystal cavitieswith resonances near the GaAs bandgap energy at room temperature using apump-probe measurement. Carriers generated via photoexcitation using anabove-band femtosecond pulse cause a substantial blue-shift in the cavity peak.The experimental results are compared to theoretical models based on freecarrier effects near the GaAs band edge. The probe transmission is modified foran estimated above-band pump energy of 4.2 fJ absorbed in the GaAs slab.

Fast carrier dynamics in GaAs photonic crystals near the material band edge at room temperature