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Detecting the carrier scattering mechanisms in a materials system isimportant for transport related science and engineering. The approaches of fastlaser process and electrical conductivity matching were used in previousliterature, which do not give accurate information on scattering relaxationtime as a function of carrier energy for intrinsic photon-free transport.Graphene is considered as a model system in materials science studying for itssimple atomic and electronic structures. Here we have developed a newmethodology to detect the scattering relaxation time as a function of carrierenergy, which can be used to infer the carrier scattering mechanisms atdifferent temperatures. Our method utilizes the measured values of optimalSeebeck coefficient, for both P-type and N-type materials. This new approachcan eliminate the influence from photon-carrier scattering in the fast-lasermethod, and avoid the over-fitting issue in the electrical conductivitymatching method. We have then applied the new approach in the SiO2 substratedgraphene system, and discovered that the Dirac carriers are mainly scattered byshort-range interactions at 40 K. The scatter strength of long-range Coulombinteraction increases with temperature. At 300 K, the long-range andshort-range interactions scatter the Dirac carriers with almost comparablestrengths.

New Method to Detect the Transport Scattering Mechanisms of Graphene Carriers