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Surface traps and associated emission in quantum dots (QDs) sought a lot ofresearch attention because of the fundamental interests apart from theirinfluence on the emission characteristics. In ref [Acc. Chem. Res. Vol 43 (2)pp 190, 2010] the hole traps (h-traps) are depicted close to the conductionband (CB) for CdSe QDs while discussing the emission mechanism. However,notably electron traps (e-traps) are close to CB and h-traps are supposedlyclose to the valance band, especially in anion rich CdSe QDs. Although suchemission (so called deep-trap) is a well known phenomenon, the energeticlocations of these traps and the associated discrepancy require furtherattention. Hence the distinction between e, h-traps and their energeticlocation within the band gap is addressed in a general context, which isessentially a revisit to the surface states. Finally this general descriptionis put to the context of surface states of CdSe QDs.

Comment on 'Semiconductor nanocrystals: structure, properties, and band gap engineering' [Acc. Chem. Res. Vol 43 (2) pp 190, (2010)]